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| QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor April 2007 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Features Tight production distribution Steel lead frames for improved reliability in solder tm Description The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. PACKAGE DIMENSIONS mounting Good optical-to-mechanical alignment Plastic package is infrared transparent black to attenuate visible light Can be used with QECXXX LED Black plastic body allows easy recognition from LED Package Dimensions 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM Schematic COLLECTOR 0.155 (3.94) 0.018 (0.46) SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.10 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER (c)2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Units C C C C V V mW Notes: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical/Optical Characteristics (TA =25C) Symbol Parameter PS ICEO BVCEO BVECO IC(ON) Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current QSC112 On-State Collector Current QSC113 On-State Collector Current QSC114 VCE(sat) tr tf Saturation Voltage Rise Time Fall Time Ee = 0.5 mW/cm2, IC = 0.5 mA(5) VCC = 5 V, RL = 100 , IC = 2 mA 5.0 5.0 VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2, VCE = 5 V(5) 30 5 1 2.40 4.00 0.4 V s 4 9.60 Test Conditions Min. Typ. 880 4 Max. Units nm 100 nA V V mA Note: 5. = 880 nm, AlGaAs. (c)2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com 2 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Typical Performance Curves Figure 1. Light Current vs. Radiant Intensity 102 VCE = 5V GaAs Light Source Figure 2. Angular Response Curve 110 100 90 80 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 120 130 10 1 140 150 160 170 180 1.0 10 -1 100 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0.1 Ee - Radiant Intensity (mW/cm 2) 1 Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie = 1mW/cm 2 I CEO - Dark Current (nA) 100 I L - Normalized Light Current Ie = 0.5mW/cm 2 100 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC 10-2 0.1 10-2 10-3 0 5 10 15 20 25 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 Normalized to: VCE = 25V I CEO - Normalized Dark Current 103 TA = 25 C o VCE = 25V VCE = 10V 102 101 100 10-1 25 50 75 100 o TA - Ambient Temperature ( C ) (c)2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com 3 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM 2 E CMOSTM (R) EcoSPARK EnSignaTM FACT Quiet SeriesTM (R) FACT (R) FAST FASTrTM FPSTM (R) FRFET GlobalOptoisolatorTM GTOTM HiSeCTM (R) i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM (R) OPTOLOGIC (R) OPTOPLANAR PACMANTM PDP-SPMTM POPTM (R) Power220 (R) Power247 PowerEdgeTM PowerSaverTM Power-SPMTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM -3 SuperSOTTM -6 SuperSOTTM -8 SyncFETTM TCMTM (R) The Power Franchise TM TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM (R) UHC UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c)2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com 4 |
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